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| SEMiX 253GD176HDc Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX(R) 33c Trench IGBT Modules SEMiX 253GD176HDc Inverse diode Characteristics Symbol Conditions IGBT min. typ. max. Units Preliminary Data Features Typical Applications Inverse diode Remarks Thermal characteristics Temperature sensor Mechanical data GD 1 01-03-2006 GES (c) by SEMIKRON SEMiX 253GD176HDc Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 01-03-2006 GES (c) by SEMIKRON SEMiX 253GD176HDc Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 01-03-2006 GES (c) by SEMIKRON SEMiX 253GD176HDc Fig. 13 Typ. CAL diode recovered charge This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 01-03-2006 GES (c) by SEMIKRON |
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